Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Takao Nishikawa; Shin Ichiro Kobayashi; Tomoyuki Nakanowatari; Tadaoki Mitani; Tatsuya Shimoda; Yoshihiro Kubozono; Gakushi Yamamoto; Hisao Ishii; Michio Niwano; Yoshihiro Iwasa

doi:10.1063/1.1903109

Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Takao Nishikawa, Shin Ichiro Kobayashi, Tomoyuki Nakanowatari, Tadaoki Mitani, Tatsuya Shimoda, Yoshihiro Kubozono, Gakushi Yamamoto, Hisao Ishii, Michio Niwano, Yoshihiro Iwasa

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Abstract

We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@ C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.

Original language	English
Article number	104509
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1903109
Publication status	Published - 2005 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1903109

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title = "Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification",

abstract = "We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@ C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.",

author = "Takao Nishikawa and Kobayashi, {Shin Ichiro} and Tomoyuki Nakanowatari and Tadaoki Mitani and Tatsuya Shimoda and Yoshihiro Kubozono and Gakushi Yamamoto and Hisao Ishii and Michio Niwano and Yoshihiro Iwasa",

note = "Funding Information: The authors thanks N. Yoshimoto and S. Ogawa for their experimental help in the surface characterization of Au. Work at Research Institute for Electrical Communication, Tohoku University was partly supported by a grant from MEXT, Japan (Grant No. 15350075). ",

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T1 - Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

AU - Nishikawa, Takao

AU - Kobayashi, Shin Ichiro

AU - Nakanowatari, Tomoyuki

AU - Mitani, Tadaoki

AU - Shimoda, Tatsuya

AU - Kubozono, Yoshihiro

AU - Yamamoto, Gakushi

AU - Ishii, Hisao

AU - Niwano, Michio

AU - Iwasa, Yoshihiro

N1 - Funding Information: The authors thanks N. Yoshimoto and S. Ogawa for their experimental help in the surface characterization of Au. Work at Research Institute for Electrical Communication, Tohoku University was partly supported by a grant from MEXT, Japan (Grant No. 15350075).

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@ C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.

AB - We report an ambipolar operation in field-effect transistors of C60 and metallofullerene Dy@ C82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves.

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Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

Abstract

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