Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer

Yuji Kagamitani; Dirk Ehrentraut; Akira Yoshikawa; Naruhiro Hoshino; Tsuguo Fukuda; Shinichiro Kawabata; Katsuhiko Inaba

doi:10.1143/JJAP.45.4018

Ammonothermal epitaxy of thick GaN film using NH₄Cl mineralizer

Yuji Kagamitani, Dirk Ehrentraut, Akira Yoshikawa, Naruhiro Hoshino, Tsuguo Fukuda, Shinichiro Kawabata, Katsuhiko Inaba

Materials Design Division

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

Single-crystalline GaN films of ≤ 110 μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure (≤ 170 MPa) ammonothermal growth method with NH ₄Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the (0001̄) face of the substrate of ≥5 μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.

Original language	English
Pages (from-to)	4018-4020
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	5 A
DOIs	https://doi.org/10.1143/JJAP.45.4018
Publication status	Published - 2006 May 9

Keywords

Acidic mineralizers
Ammonothermal method
Ga precursor
GaN film
GaN precursor
Homoepitaxy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.4018

Cite this

@article{0626210b9aeb404ea3b08277989ebf8e,

title = "Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer",

abstract = "Single-crystalline GaN films of ≤ 110 μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure (≤ 170 MPa) ammonothermal growth method with NH 4Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the (000{\=1}) face of the substrate of ≥5 μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.",

keywords = "Acidic mineralizers, Ammonothermal method, Ga precursor, GaN film, GaN precursor, Homoepitaxy",

author = "Yuji Kagamitani and Dirk Ehrentraut and Akira Yoshikawa and Naruhiro Hoshino and Tsuguo Fukuda and Shinichiro Kawabata and Katsuhiko Inaba",

year = "2006",

month = may,

day = "9",

doi = "10.1143/JJAP.45.4018",

language = "English",

volume = "45",

pages = "4018--4020",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

TY - JOUR

T1 - Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer

AU - Kagamitani, Yuji

AU - Ehrentraut, Dirk

AU - Yoshikawa, Akira

AU - Hoshino, Naruhiro

AU - Fukuda, Tsuguo

AU - Kawabata, Shinichiro

AU - Inaba, Katsuhiko

PY - 2006/5/9

Y1 - 2006/5/9

N2 - Single-crystalline GaN films of ≤ 110 μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure (≤ 170 MPa) ammonothermal growth method with NH 4Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the (0001̄) face of the substrate of ≥5 μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.

AB - Single-crystalline GaN films of ≤ 110 μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure (≤ 170 MPa) ammonothermal growth method with NH 4Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the (0001̄) face of the substrate of ≥5 μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.

KW - Acidic mineralizers

KW - Ammonothermal method

KW - Ga precursor

KW - GaN film

KW - GaN precursor

KW - Homoepitaxy

UR - http://www.scopus.com/inward/record.url?scp=33646893686&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646893686&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4018

DO - 10.1143/JJAP.45.4018

M3 - Article

AN - SCOPUS:33646893686

SN - 0021-4922

VL - 45

SP - 4018

EP - 4020

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 5 A

ER -