Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer

Yuji Kagamitani, Dirk Ehrentraut, Akira Yoshikawa, Naruhiro Hoshino, Tsuguo Fukuda, Shinichiro Kawabata, Katsuhiko Inaba

Research output: Contribution to journalArticlepeer-review

67 Citations (Scopus)


Single-crystalline GaN films of ≤ 110 μm in thickness have been fabricated on hydride vapor phase-grown (0001) GaN substrates by employing a relatively low-pressure (≤ 170 MPa) ammonothermal growth method with NH 4Cl as mineralizer. Metallic Ga and polycrystalline GaN has been the chosen precursor. An average growth speed on the (0001̄) face of the substrate of ≥5 μm/day was observed when using metallic Ga and about 7 μm/day for GaN. The maximum growth speed of 27.5 μm/day was achieved for the film grown at a supersaturation from a combined Ga/GaN precursor. The surface morphology is not affected by the nature of the precursor.

Original languageEnglish
Pages (from-to)4018-4020
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 2006 May 9


  • Acidic mineralizers
  • Ammonothermal method
  • Ga precursor
  • GaN film
  • GaN precursor
  • Homoepitaxy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer'. Together they form a unique fingerprint.

Cite this