TY - JOUR
T1 - Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer
AU - Kagamitani, Y.
AU - Kuribayashi, T.
AU - Hazu, K.
AU - Onuma, T.
AU - Tomida, D.
AU - Simura, R.
AU - Chichibu, S. F.
AU - Sugiyama, K.
AU - Yokoyama, C.
AU - Ishiguro, T.
AU - Fukuda, T.
N1 - Funding Information:
The GaN seed wafers grown by HVPE were supplied from Mitsubishi Chemical Corporation. This work was supported in part by Grant-in-aids of CANTech, IMRAM, Tohoku University, and the Project of Strategic Development for Energy Conservation Technology driven by a NEDO program by METI, Japan.
PY - 2010/11/1
Y1 - 2010/11/1
N2 - Purely wurtzite phase needle crystals and epitaxial layers of GaN were grown by the ammonothermal method using an NH4I mineralizer. The inclusion of zincblende phase GaN was effectively eliminated by increasing the growth temperature higher than 500 °C. Accordingly, an approximately 20-μm-thick GaN epitaxial layer was achieved on the Ga-polar face of a c-plane GaN seed wafer at 520 °C. Although the characteristic deep state emission band dominated the room temperature photoluminescence spectrum, the near-band-edge emission of GaN was observed for both the needle crystals and the epitaxial layers. These results encourage one to grow better quality GaN crystals at a high growth rate under high-temperature growth conditions.
AB - Purely wurtzite phase needle crystals and epitaxial layers of GaN were grown by the ammonothermal method using an NH4I mineralizer. The inclusion of zincblende phase GaN was effectively eliminated by increasing the growth temperature higher than 500 °C. Accordingly, an approximately 20-μm-thick GaN epitaxial layer was achieved on the Ga-polar face of a c-plane GaN seed wafer at 520 °C. Although the characteristic deep state emission band dominated the room temperature photoluminescence spectrum, the near-band-edge emission of GaN was observed for both the needle crystals and the epitaxial layers. These results encourage one to grow better quality GaN crystals at a high growth rate under high-temperature growth conditions.
KW - A.1. Crystal structure
KW - A.2. Growth from high temperature solutions
KW - A.2. Single crystal growth
KW - A.3. Liquid phase epitaxy
KW - B.2. Semiconducting gallium compounds
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U2 - 10.1016/j.jcrysgro.2010.07.065
DO - 10.1016/j.jcrysgro.2010.07.065
M3 - Article
AN - SCOPUS:77957857024
SN - 0022-0248
VL - 312
SP - 3384
EP - 3387
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 22
ER -