Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Kazuhiko Endo; Toru Tatsumi

doi:10.1063/1.118935

Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

Kazuhiko Endo, Toru Tatsumi

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

NEC Corporation

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The effect on the thermal and dielectric properties of incorporating benzene rings in hydrogenated amorphous carbon (a-C:H) films was investigated. The benzene rings were introduced into a-C:H films by using plasma-enhanced chemical vapor deposition and aromatic source compounds. The a-C:H film that contained benzene rings had thermal stability up to 400°C and a low-dielectric constant of 3.0. The difference in the dielectric constant and thermal stability of a-C:H films appeared to be due to the hydrogen concentration of the films.

Original language	English
Pages (from-to)	2616-2618
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	19
DOIs	https://doi.org/10.1063/1.118935
Publication status	Published - 1997 May 12

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abstract = "The effect on the thermal and dielectric properties of incorporating benzene rings in hydrogenated amorphous carbon (a-C:H) films was investigated. The benzene rings were introduced into a-C:H films by using plasma-enhanced chemical vapor deposition and aromatic source compounds. The a-C:H film that contained benzene rings had thermal stability up to 400°C and a low-dielectric constant of 3.0. The difference in the dielectric constant and thermal stability of a-C:H films appeared to be due to the hydrogen concentration of the films.",

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AB - The effect on the thermal and dielectric properties of incorporating benzene rings in hydrogenated amorphous carbon (a-C:H) films was investigated. The benzene rings were introduced into a-C:H films by using plasma-enhanced chemical vapor deposition and aromatic source compounds. The a-C:H film that contained benzene rings had thermal stability up to 400°C and a low-dielectric constant of 3.0. The difference in the dielectric constant and thermal stability of a-C:H films appeared to be due to the hydrogen concentration of the films.

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Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics

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