Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar

Heavier noble gases Kr and Xe instead of the lighter Ar during the magnetron-sputtering deposition of amorphous indium-gallium-zinc oxide films are introduced in fabricating their thin-film transistors (TFTs). Heavy noble gases can reduce damage to film induced by ion bombardment during the sputtering depositions. Higher field-effect mobility with better gate bias stability can be obtained in the heavier-noble-gas sputtered TFTs. Raman spectroscopic analysis and X-ray reflectometry respectively suggest that the disordered structure in the film is suppressed, and the film becomes denser by introducing heavy noble gases, corresponding to the improvement of TFT performance.