TY - GEN
T1 - AMORPHOUS SILICON MOSFETs BY ANODIC OXIDATION.
AU - Yamamoto, Hidekazu
AU - Arimoto, Satoshi
AU - Ohno, Hideo
AU - Hasegawa, Hideki
PY - 1984
Y1 - 1984
N2 - The anodic oxidation in AGW electrolyte is applied to Al/a-Si:H structures to form Al//2O//3/native oxide/a-Si:H gate structure. Interface properties of this MOS structure as well as fabrication of a-Si:H MOSFETs are investigated. Resulting FETs show maximum effective mobility of 0. 2 cm**2/vs after proper low temperature annealing in H//2. The feasibility of a planar a-Si integrated circuit is demonstrated by fabricating integrated image sensors.
AB - The anodic oxidation in AGW electrolyte is applied to Al/a-Si:H structures to form Al//2O//3/native oxide/a-Si:H gate structure. Interface properties of this MOS structure as well as fabrication of a-Si:H MOSFETs are investigated. Resulting FETs show maximum effective mobility of 0. 2 cm**2/vs after proper low temperature annealing in H//2. The feasibility of a planar a-Si integrated circuit is demonstrated by fabricating integrated image sensors.
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U2 - 10.7567/ssdm.1984.b-12-1
DO - 10.7567/ssdm.1984.b-12-1
M3 - Conference contribution
AN - SCOPUS:0021617542
SN - 4930813077
SN - 9784930813077
T3 - Conference on Solid State Devices and Materials
SP - 547
EP - 550
BT - Conference on Solid State Devices and Materials
PB - Business Cent for Academic Soc Japan
ER -