Amorphous-to-crystalline transition-induced two-step thin film growth of quasi-one-dimensional penta-telluride ZrTe5

Yi Shuang, Yuta Saito, Shogo Hatayama, Paul Fons, Ando Daisuke, Yuji Sutou

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Quasi-one-dimensional (quasi-1D) van der Waals (vdWs) materials, such as ZrTe5, exhibit unique electrical properties and quantum phenomena, making them attractive for advanced electronic applications. However, large-scale growth of ZrTe5 thin films presents challenges. We address this by employing sputtering, a common semiconductor industry technique. The as-deposited ZrTe5 film is amorphous, and post-annealing induces a crystallization process akin to transition-metal dichalcogenides. Our study investigates the electrical and optical properties during this amorphous-to-crystalline transition, revealing insights into the underlying mechanism. This work contributes to the fundamental understanding of quasi-1D materials and introduces a scalable fabrication method for ZrTe5 which offers the possibility of fabricating unique future electronic and optical devices.

Original languageEnglish
Pages (from-to)246-253
Number of pages8
JournalJournal of Materials Science and Technology
Volume210
DOIs
Publication statusPublished - 2025 Mar 1

Keywords

  • Large-scale
  • Phase-change
  • Quasi-one-dimensional
  • Thin film
  • ZrTe

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