An InAs-based intersubband quantum cascade laser

Keita Ohtani; Hideo Ohno

doi:10.1143/jjap.41.l1279

An InAs-based intersubband quantum cascade laser

Keita Ohtani, Hideo Ohno

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36 Citations (Scopus)

Abstract

Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 μm has been observed at 4 K with a threshold current density of 5.2 kA/cm².

Original language	English
Pages (from-to)	L1279-L1280
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/jjap.41.l1279
Publication status	Published - 2002 Nov 15

Keywords

Intersubband transition
Molecular beam epitaxy
Quantum cascade laser
Type-II quantum well

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.41.l1279

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abstract = "Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 μm has been observed at 4 K with a threshold current density of 5.2 kA/cm2.",

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AU - Ohno, Hideo

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AB - Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 μm has been observed at 4 K with a threshold current density of 5.2 kA/cm2.

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KW - Molecular beam epitaxy

KW - Quantum cascade laser

KW - Type-II quantum well

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ER -

An InAs-based intersubband quantum cascade laser

Abstract

Keywords

ASJC Scopus subject areas

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