An InAs-based intersubband quantum cascade laser

Keita Ohtani, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 μm has been observed at 4 K with a threshold current density of 5.2 kA/cm2.

Original languageEnglish
Pages (from-to)L1279-L1280
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11 B
Publication statusPublished - 2002 Nov 15


  • Intersubband transition
  • Molecular beam epitaxy
  • Quantum cascade laser
  • Type-II quantum well

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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