TY - GEN
T1 - An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration
AU - Suzuki, M.
AU - Suzuki, M.
AU - Kuroda, R.
AU - Kumagai, Y.
AU - Chiba, A.
AU - Miura, N.
AU - Kuriyama, N.
AU - Sugawa, S.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/1/31
Y1 - 2017/1/31
N2 - This paper presents an over 1Mfps global shutter CMOS image sensor with on-chip 480 memories per pixel using high capacitance density vertical analog memory integration technology. The prototype chips with 96H×128V pixels were fabricated with various memory fabrication conditions and ultra-high speed video capturing at 1Mfps with 480 consecutive frames is successfully demonstrated.
AB - This paper presents an over 1Mfps global shutter CMOS image sensor with on-chip 480 memories per pixel using high capacitance density vertical analog memory integration technology. The prototype chips with 96H×128V pixels were fabricated with various memory fabrication conditions and ultra-high speed video capturing at 1Mfps with 480 consecutive frames is successfully demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85014475007&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85014475007&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2016.7838376
DO - 10.1109/IEDM.2016.7838376
M3 - Conference contribution
AN - SCOPUS:85014475007
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 8.5.1-8.5.4
BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016
Y2 - 3 December 2016 through 7 December 2016
ER -