A wide dynamic range 64×64 CMOS image sensor with 20×20μm2 pixel that combines a lateral-overflow integration voltage-readout operation with the current readout operation from the buried photo-diode has been developed. In the voltage readout operation, an over 160-dB dynamic range image with a linear response is obtained from sequential electronic shutter operations from 1/30 s to 1/130 ks with a dynamic range of about 100-dB within a light intensity range from about 10-2lx to 106lx. In addition, an over 200-dB dynamic range performance of up to 108lx or more with few time exposures in the high illuminance region is made possible by combining it with the current reading operation. More than 40 dB for all noises, including photon shot noise, occurs around all the switching points.
|Number of pages
|Kyokai Joho Imeji Zasshi/Journal of the Institute of Image Information and Television Engineers
|Published - 2007 Mar