An oxide-diluted magnetic semiconductor: Mn-doped ZnO

T. Fukumura; Zhengwu Jin; A. Ohtomo; H. Koinuma; M. Kawasaki

doi:10.1063/1.125353

An oxide-diluted magnetic semiconductor: Mn-doped ZnO

T. Fukumura, Zhengwu Jin, A. Ohtomo, H. Koinuma, M. Kawasaki

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

707 Citations (Scopus)

Abstract

Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn_1-xMn_xO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 10¹⁹cm^-3 can be doped into the Zn_1-xMn_xO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.

Original language	English
Pages (from-to)	3366-3368
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	21
DOIs	https://doi.org/10.1063/1.125353
Publication status	Published - 1999 Nov 22

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abstract = "Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1-xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019cm-3 can be doped into the Zn1-xMnxO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.",

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T1 - An oxide-diluted magnetic semiconductor

T2 - Mn-doped ZnO

AU - Fukumura, T.

AU - Jin, Zhengwu

AU - Ohtomo, A.

AU - Koinuma, H.

AU - Kawasaki, M.

PY - 1999/11/22

Y1 - 1999/11/22

N2 - Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1-xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019cm-3 can be doped into the Zn1-xMnxO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.

AB - Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal equilibrium limit as a result of nonequilibrium film growth process. As Mn content is increased, the lattice constants of both a and c axes of wurtzite Zn1-xMnxO films (x<0.35) increase and the band gap expands although considerable in-gap absorption develops. Itinerant electrons over 1019cm-3 can be doped into the Zn1-xMnxO films by Al doping, in contrast to low carrier density in the other II-VI diluted magnetic semiconductors. The temperature dependence of the resistivity is almost metallic and considerable magnetoresistance is observed at low temperatures.

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An oxide-diluted magnetic semiconductor: Mn-doped ZnO

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