TY - GEN
T1 - Analysis of charge-to-hot-carrier degradation in Ge pFinFETs
AU - Mizubayashi, Wataru
AU - Oka, Hiroshi
AU - Fukuda, Koichi
AU - Ishikawa, Yuki
AU - Endo, Kazuhiko
N1 - Funding Information:
A part of this work was conducted at the AIST Nano-Processing Facility supported by "Nanotechnology Platform Program" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/4
Y1 - 2020/4
N2 - We have investigated the charge-to-hot-carrier degradation (QHCD) in Ge pFinFETs with HfO2/Al2O3/GeO2 gate stacks. The QHCD of Ge pFinFETs has a power-law relationship with drain current at each drain voltage, regardless of gate length. Hot-carrier degradation (HCD) is caused when hot holes generated by impact ionization are trapped in as-grown hole traps [1] in the GeO2 interfacial layer and the trap sites in HfO2/Al2O3 film. The velocity of hot carriers of Ge is high because the carrier mobility of Ge is high. In the case of high-velocity hot carriers, the detrapping of the trapped carriers occurs at a constant rate. Therefore, the trapping rate of hot carriers depends on the drain current. This is the reason why QHCD has a power-law relationship with drain current. Also, in the case of a high impact ionization rate such as that of Ge, the generation of hot carriers is sensitive to the lateral electric field, which is related to the drain voltage. This is the reason why the power-law relationship of QHCD is determined by drain voltage.
AB - We have investigated the charge-to-hot-carrier degradation (QHCD) in Ge pFinFETs with HfO2/Al2O3/GeO2 gate stacks. The QHCD of Ge pFinFETs has a power-law relationship with drain current at each drain voltage, regardless of gate length. Hot-carrier degradation (HCD) is caused when hot holes generated by impact ionization are trapped in as-grown hole traps [1] in the GeO2 interfacial layer and the trap sites in HfO2/Al2O3 film. The velocity of hot carriers of Ge is high because the carrier mobility of Ge is high. In the case of high-velocity hot carriers, the detrapping of the trapped carriers occurs at a constant rate. Therefore, the trapping rate of hot carriers depends on the drain current. This is the reason why QHCD has a power-law relationship with drain current. Also, in the case of a high impact ionization rate such as that of Ge, the generation of hot carriers is sensitive to the lateral electric field, which is related to the drain voltage. This is the reason why the power-law relationship of QHCD is determined by drain voltage.
KW - Ge
KW - Hot-carrier degradation
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U2 - 10.1109/IRPS45951.2020.9129279
DO - 10.1109/IRPS45951.2020.9129279
M3 - Conference contribution
AN - SCOPUS:85088383442
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020
Y2 - 28 April 2020 through 30 May 2020
ER -