Analysis of compositional instability of InGaN by Monte Carlo simulation

Yoshihiro Kangawa; Koichi Kakimoto; Tomonori Ito; Akinori Koukitu

doi:10.1016/j.jcrysgro.2006.10.017

Analysis of compositional instability of InGaN by Monte Carlo simulation

Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, Akinori Koukitu

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].

Original language	English
Pages (from-to)	190-192
Number of pages	3
Journal	Journal of Crystal Growth
Volume	298
Issue number	SPEC. ISS
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.017
Publication status	Published - 2007 Jan
Externally published	Yes

Keywords

A1. Segregation
A3. Metalorganic vapor phase epitaxy
B1. Nitride

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.10.017

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title = "Analysis of compositional instability of InGaN by Monte Carlo simulation",

abstract = "Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].",

keywords = "A1. Segregation, A3. Metalorganic vapor phase epitaxy, B1. Nitride",

author = "Yoshihiro Kangawa and Koichi Kakimoto and Tomonori Ito and Akinori Koukitu",

year = "2007",

month = jan,

doi = "10.1016/j.jcrysgro.2006.10.017",

language = "English",

volume = "298",

pages = "190--192",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "SPEC. ISS",

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TY - JOUR

T1 - Analysis of compositional instability of InGaN by Monte Carlo simulation

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Ito, Tomonori

AU - Koukitu, Akinori

PY - 2007/1

Y1 - 2007/1

N2 - Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].

AB - Relationships between growth conditions and atomic arrangements in InGaN thin films were investigated by Monte Carlo simulation incorporating data obtained from thermodynamic analyses and empirical interatomic potential calculations. The results suggest that compositional fluctuation was enhanced during the site-exchanging process instead of the adsorption process in the case of low indium input partial pressure. Moreover, it was found that no gross fluctuation in composition occurs but atomic-sized clustering occurs in thin films. The results agree with the experimental results [Smeeton et al., Appl. Phys. Lett. 83 (2003) 5419].

KW - A1. Segregation

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitride

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U2 - 10.1016/j.jcrysgro.2006.10.017

DO - 10.1016/j.jcrysgro.2006.10.017

M3 - Article

AN - SCOPUS:33846442423

SN - 0022-0248

VL - 298

SP - 190

EP - 192

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS

ER -

Analysis of compositional instability of InGaN by Monte Carlo simulation

Abstract

Keywords

ASJC Scopus subject areas

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