Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

Shuntaro Fujii; Shin Ichiro Kuroki; Xiaoli Zhu; Masayuki Numata; Koji Kotani; Takashi Ito

doi:10.1143/JJAP.47.3046

Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

Shuntaro Fujii, Shin Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 × 2 μm² grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.

Original language	English
Pages (from-to)	3046-3049
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.3046
Publication status	Published - 2008 Apr 25

Keywords

CLC
Crystallization
CW laser
Grain
Poly-Si
Strain

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title = "Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain",

abstract = "Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 × 2 μm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.",

keywords = "CLC, Crystallization, CW laser, Grain, Poly-Si, Strain",

author = "Shuntaro Fujii and Kuroki, {Shin Ichiro} and Xiaoli Zhu and Masayuki Numata and Koji Kotani and Takashi Ito",

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T1 - Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

AU - Fujii, Shuntaro

AU - Kuroki, Shin Ichiro

AU - Zhu, Xiaoli

AU - Numata, Masayuki

AU - Kotani, Koji

AU - Ito, Takashi

PY - 2008/4/25

Y1 - 2008/4/25

N2 - Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 × 2 μm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.

AB - Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20 × 2 μm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.

KW - CLC

KW - Crystallization

KW - CW laser

KW - Grain

KW - Poly-Si

KW - Strain

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

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Analysis of continuous-wave laser lateral crystallized polycrystalline silicon thin films with large tensile strain

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Keywords

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