A Cu-Mn alloy film was deposited on Si O2 to self-form a diffusion barrier layer of Mn Ox at their interface. Transmission electron microscopy revealed that the barrier layer was formed not on the Cu alloy side but on the Si O2 side. Capacitance-voltage measurement revealed the decrease in the dielectric constant of the barrier layer from 11.4 to 5.1 with increasing annealing temperature. The obtained results indicated that the self-forming barrier layer with Cu-Mn is an excellent barrier layer without posing any negative influences on the interconnect line resistance and on the insulator capacitance.
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2009|