Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS- Si O2

S. M. Chung; J. Koike

doi:10.1116/1.3224884

Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS- Si O₂

S. M. Chung, J. Koike

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

A Cu-Mn alloy film was deposited on Si O₂ to self-form a diffusion barrier layer of Mn O_x at their interface. Transmission electron microscopy revealed that the barrier layer was formed not on the Cu alloy side but on the Si O₂ side. Capacitance-voltage measurement revealed the decrease in the dielectric constant of the barrier layer from 11.4 to 5.1 with increasing annealing temperature. The obtained results indicated that the self-forming barrier layer with Cu-Mn is an excellent barrier layer without posing any negative influences on the interconnect line resistance and on the insulator capacitance.

Original language	English
Pages (from-to)	L28-L31
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1116/1.3224884
Publication status	Published - 2009

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abstract = "A Cu-Mn alloy film was deposited on Si O2 to self-form a diffusion barrier layer of Mn Ox at their interface. Transmission electron microscopy revealed that the barrier layer was formed not on the Cu alloy side but on the Si O2 side. Capacitance-voltage measurement revealed the decrease in the dielectric constant of the barrier layer from 11.4 to 5.1 with increasing annealing temperature. The obtained results indicated that the self-forming barrier layer with Cu-Mn is an excellent barrier layer without posing any negative influences on the interconnect line resistance and on the insulator capacitance.",

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AB - A Cu-Mn alloy film was deposited on Si O2 to self-form a diffusion barrier layer of Mn Ox at their interface. Transmission electron microscopy revealed that the barrier layer was formed not on the Cu alloy side but on the Si O2 side. Capacitance-voltage measurement revealed the decrease in the dielectric constant of the barrier layer from 11.4 to 5.1 with increasing annealing temperature. The obtained results indicated that the self-forming barrier layer with Cu-Mn is an excellent barrier layer without posing any negative influences on the interconnect line resistance and on the insulator capacitance.

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Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS- Si O₂

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