Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering

The epitaxial growth and the formation of an interface layer for MnSb sputtered films fabricated on Si (111) single crystal substrates was investigated. It was found that (1) at T _sub=200°C, MnSb grains grew epitaxially with (101) orientation as the dominant crystal orientation on a Si (111) substrate and (2) at T _sub=250°C (a) in the thickness region from 0 to 70 nm, a MnSi reacted layer was formed and grown epitaxially with (111) orientation, (b) in the thickness region over 70 nm, MnSb grains were formed and grown epitaxially with c-plane orientation on the MnSi interface layer.