Abstract
We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365°C and 495°C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.
| Original language | English |
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| Article number | F7.25 |
| Pages (from-to) | 347-352 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 832 |
| Publication status | Published - 2005 |
| Event | 2004 MRS Fall Meeting - Boston, MA, United States Duration: 2004 Nov 29 → 2004 Dec 1 |