Analysis of hundreds of time constant ratios and amplitudes of random telegraph signal with very large scale array test pattern

Random telegraph signal (RTS) noise shows discrete and stochastic switching in two or more states at a drain current or threshold voltage. The capture and emission of carriers in individual traps near a silicon-gate insulator film interface induce RTS noise phenomena. RTS noise has become a crucial problem in analog devices and other devices. To suppress RTS noise, it is necessary to determine the energy level of traps. Time constant ratio has a strong relationship with the energy level of traps in gate insulator films. In this paper, we extract a large number of RTS data sets with large-scale array test patterns and evaluate the gate-bias voltage dependences of time constant ratio and amplitude. We demonstrate that the energy level of traps distributes uniformly at a drain current of at least 0.1-1.0 μA.