Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

Y. Xu; F. Balestra; J. A. Chroboczek; G. Ghibaudo; T. Minari; K. Tsukagoshi; R. Gwoziecki; R. Coppard

doi:10.1109/ICNF.2011.5994384

Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

Y. Xu, F. Balestra, J. A. Chroboczek, G. Ghibaudo, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.

Original language	English
Title of host publication	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
Pages	57-60
Number of pages	4
DOIs	https://doi.org/10.1109/ICNF.2011.5994384
Publication status	Published - 2011 Sept 19
Externally published	Yes
Event	21st International Conference on Noise and Fluctuations, ICNF 2011 - Toronto, ON, Canada Duration: 2011 Jun 12 → 2011 Jun 16

Publication series

Name	Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

Conference

Conference	21st International Conference on Noise and Fluctuations, ICNF 2011
Country/Territory	Canada
City	Toronto, ON
Period	11/6/12 → 11/6/16

Keywords

DC
Low-frequency noise
organic transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.1109/ICNF.2011.5994384

Cite this

Xu, Y., Balestra, F., Chroboczek, J. A., Ghibaudo, G., Minari, T., Tsukagoshi, K., Gwoziecki, R., & Coppard, R. (2011). Analysis of low-frequency noise in organic field-effect transistors combining static and noise data. In Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011 (pp. 57-60). [5994384] (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011). https://doi.org/10.1109/ICNF.2011.5994384

Analysis of low-frequency noise in organic field-effect transistors combining static and noise data. / Xu, Y.; Balestra, F.; Chroboczek, J. A. et al.

Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. 2011. p. 57-60 5994384 (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, Y, Balestra, F, Chroboczek, JA, Ghibaudo, G, Minari, T, Tsukagoshi, K, Gwoziecki, R & Coppard, R 2011, Analysis of low-frequency noise in organic field-effect transistors combining static and noise data. in Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011., 5994384, Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011, pp. 57-60, 21st International Conference on Noise and Fluctuations, ICNF 2011, Toronto, ON, Canada, 11/6/12. https://doi.org/10.1109/ICNF.2011.5994384

Xu Y, Balestra F, Chroboczek JA, Ghibaudo G, Minari T, Tsukagoshi K et al. Analysis of low-frequency noise in organic field-effect transistors combining static and noise data. In Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011. 2011. p. 57-60. 5994384. (Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011). doi: 10.1109/ICNF.2011.5994384

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title = "Analysis of low-frequency noise in organic field-effect transistors combining static and noise data",

abstract = "A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.",

keywords = "DC, Low-frequency noise, organic transistors",

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Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

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