TY - GEN
T1 - Analysis of multilayered CoZrNb film on-chip noise suppressor as a function of resistivity and permeability
AU - Ma, J.
AU - Kijima, H.
AU - Yamaguchi, M.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Radio frequency integrated circuit (RF IC) is widely applied to small-size multi-function information terminal with higher data transfer rate[1]. Because of the mixed layout of digital and analog circuits in a latest RF IC chip, the electric current-oriented magnetic noise from the digital circuit to the analog circuit will desensitize analog receiver circuit chain. A new method to use FMR losses of magnetic film was proposed and implemented for a cellular phone RF IC receiver circuit, which experimentally demonstrated good noise suppression in the LTE Band 1 (2.1 GHz range) [2]. Analysis of the noise suppressor, however, was not successful [3] because of complicated on-chip FMR, eddy currents and magnetic field distribution associated with crossed-anisotropy multilayered Co85Zr3Nb12 film. Therefore this paper discussed not the crossed anisotropy but the uniaxially aligned multilayer of the same Co85Zr3Nb12 film (Ms= 1.0T, Hk= 1.2 kA/m, resistivity ρ=) covering on the top of MSL (microstrip line) as a model of on-chip wire by using finite element method full wave electromagnetic simulation.
AB - Radio frequency integrated circuit (RF IC) is widely applied to small-size multi-function information terminal with higher data transfer rate[1]. Because of the mixed layout of digital and analog circuits in a latest RF IC chip, the electric current-oriented magnetic noise from the digital circuit to the analog circuit will desensitize analog receiver circuit chain. A new method to use FMR losses of magnetic film was proposed and implemented for a cellular phone RF IC receiver circuit, which experimentally demonstrated good noise suppression in the LTE Band 1 (2.1 GHz range) [2]. Analysis of the noise suppressor, however, was not successful [3] because of complicated on-chip FMR, eddy currents and magnetic field distribution associated with crossed-anisotropy multilayered Co85Zr3Nb12 film. Therefore this paper discussed not the crossed anisotropy but the uniaxially aligned multilayer of the same Co85Zr3Nb12 film (Ms= 1.0T, Hk= 1.2 kA/m, resistivity ρ=) covering on the top of MSL (microstrip line) as a model of on-chip wire by using finite element method full wave electromagnetic simulation.
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U2 - 10.1109/INTMAG.2015.7156971
DO - 10.1109/INTMAG.2015.7156971
M3 - Conference contribution
AN - SCOPUS:84942447007
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -