Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Hitoshi Matsuo; R. Bairava Ganesh; Satoshi Nakano; Lijun Liu; Koji Arafune; Yoshio Ohshita; Masafumi Yamaguchi; Koichi Kakimoto

doi:10.1016/j.jcrysgro.2007.12.017

Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si₃N₄ to the melt during growth process.

Original language	English
Pages (from-to)	2204-2208
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.12.017
Publication status	Published - 2008 Apr
Externally published	Yes

Keywords

A1. Directional solidification
A1. Impurities
B2. Semiconducting silicon
B3. Solar cells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2007.12.017

Cite this

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title = "Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells",

abstract = "We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si3N4 to the melt during growth process.",

keywords = "A1. Directional solidification, A1. Impurities, B2. Semiconducting silicon, B3. Solar cells",

author = "Hitoshi Matsuo and {Bairava Ganesh}, R. and Satoshi Nakano and Lijun Liu and Koji Arafune and Yoshio Ohshita and Masafumi Yamaguchi and Koichi Kakimoto",

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doi = "10.1016/j.jcrysgro.2007.12.017",

language = "English",

volume = "310",

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number = "7-9",

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TY - JOUR

T1 - Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

AU - Matsuo, Hitoshi

AU - Bairava Ganesh, R.

AU - Nakano, Satoshi

AU - Liu, Lijun

AU - Arafune, Koji

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

AU - Kakimoto, Koichi

PY - 2008/4

Y1 - 2008/4

N2 - We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si3N4 to the melt during growth process.

AB - We studied the process of oxygen transfer from a quartz crucible to a multicrystalline silicon during unidirectional solidification process. We investigated the boundary layer thickness of oxygen concentration near a crucible wall region using Fourier transform infrared spectrometer (FTIR) measurement. The results suggest that oxygen concentration was increased near a crucible wall, and the boundary layer thickness of oxygen concentration was estimated to be 2-6 mm. The estimated value of boundary layer thickness of oxygen concentrations is similar to those estimated by analytical and numerical calculation. These results suggest that the oxygen was dissolved from a crucible wall through the liner made of Si3N4 to the melt during growth process.

KW - A1. Directional solidification

KW - A1. Impurities

KW - B2. Semiconducting silicon

KW - B3. Solar cells

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JO - Journal of Crystal Growth

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IS - 7-9

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Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Abstract

Keywords

ASJC Scopus subject areas

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