Abstract
The floating channel type surrounding gate transistor (FC-SGT) Flash memory cell realizes high-speed bipolarity program and erase operations. In the current investigation, the time dependence of the surface potential in the floating channel region, which strongly affects program and erase performance, is studied during program and erase operation. By analyzing the carrier generation processes in floating channel region, the program and erase operation for FC-SGT Flash memory cell is made clear.
| Original language | English |
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| Pages | 116-118 |
| Number of pages | 3 |
| Publication status | Published - 2000 |
| Event | International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA Duration: 2000 Sept 6 → 2000 Sept 8 |
Conference
| Conference | International Conference on Simulation of Semiconductor Processes and Devices |
|---|---|
| City | Seattle, WA, USA |
| Period | 00/9/6 → 00/9/8 |