Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

B. Gao, X. J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


A fully coupled compressible multi-phase flow solver was developed to effectively design a large furnace for producing large-size SiC crystals. Compressible effect, convection and buoyancy effects, flow coupling between argon gas and species, and the Stefan effect are included. A small and experimental furnace is used to validate the solver. First, the essentiality of 2D flow calculation and the significance of incorporating buoyancy effect and gas convection, the Stefan effect, and flow interaction between argon gas and species were investigated by numerical results. Then the effects of argon gas on deposition rate, growth rate, graphitization on the powder source, and supersaturation and stoichiometry on the seed were analyzed. Finally, the advantages of an extra chamber design were explained, and improvement of growth rate was validated by the present solver.

Original languageEnglish
Pages (from-to)3349-3355
Number of pages7
JournalJournal of Crystal Growth
Issue number22
Publication statusPublished - 2010 Nov 1
Externally publishedYes


  • A1. Computer simulation
  • A1. Heat transfer
  • A1. Substrate
  • A2. Growth from vapor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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