Abstract
It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3. 1 A as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.
Original language | English |
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Pages (from-to) | 1335-1337 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 26 |
Issue number | 8 |
Publication status | Published - 1987 Aug |