It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3. 1 A as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics|
|Publication status||Published - 1987 Aug|