Analysis of the interface in ferromagnet/insulator junctions by inelastic-electron-tunneling-spectroscopy

Y. Ando, J. Murai, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


Inelastic-electron-tunneling-spectroscopy (IETS) has been applied to investigate the electron states of the interface of Al/Al2O3/Co(dCo = 0 to approximately 50 angstroms)/Al and Al/Al2O3/Ni(dNi = 0 to approximately 50 angstroms)/Al tunneling junctions. A positive zero-bias anomaly was observed in the conductance curve of the junction with dCo≤20 angstroms. Correspondingly, the IET spectra showed a strong negative peak at 4 mV, while another broad peak was observed for the junctions with dCo≥10 angstroms. These results were discussed in terms of the paramagnetic impurity and magnon assisted tunneling processes. On the other hand, a positive peak was observed in the IET curves for the junction with Ni. The possibility of formation of an Ni-Al alloy was considered to explain this result.

Original languageEnglish
Pages (from-to)161-163
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - 1999 Jun 1
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: 1998 Jun 141998 Jun 19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Analysis of the interface in ferromagnet/insulator junctions by inelastic-electron-tunneling-spectroscopy'. Together they form a unique fingerprint.

Cite this