The low-frequency noise was already a strong limiting factor for radio frequency/analog integrated circuits and was expected to become soon for the digital ones. However, a very significant and effective reduction of the 1=f noise level has been realized for both n- and p-channel metal- oxide-semiconductor field-effect transistors (MOSFETs) by the means of two new fabrication processes, opening new horizons for the very large scale integration (VLSI) technology. Indeed, a significant reduction of more than two decades of the noise level has been achieved by implementing a new salicide structure for the source and drain contacts. Moreover, on account of a new process flow involving a newly developed plasma process for the realization of the gate oxide, one of the noise source, the induced mobility fluctuations, located in the channel and generating the 1=f noise has been neutralized in the case of the p-MOSFETs. Furthermore, the implementation of an adapted salicide structure in addition to the plasma process will make the insulator charge fluctuations the sole noise source in these devices.