Analysis of the low-frequency noise reduction in Si(100) metal-oxide-semiconductor field-effect transistors

Philippe Gaubert, Akinobu Teramoto, Rihito Kuroda, Yukihisa Nakao, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi

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8 Citations (Scopus)


The low-frequency noise was already a strong limiting factor for radio frequency/analog integrated circuits and was expected to become soon for the digital ones. However, a very significant and effective reduction of the 1=f noise level has been realized for both n- and p-channel metal- oxide-semiconductor field-effect transistors (MOSFETs) by the means of two new fabrication processes, opening new horizons for the very large scale integration (VLSI) technology. Indeed, a significant reduction of more than two decades of the noise level has been achieved by implementing a new salicide structure for the source and drain contacts. Moreover, on account of a new process flow involving a newly developed plasma process for the realization of the gate oxide, one of the noise source, the induced mobility fluctuations, located in the channel and generating the 1=f noise has been neutralized in the case of the p-MOSFETs. Furthermore, the implementation of an adapted salicide structure in addition to the plasma process will make the insulator charge fluctuations the sole noise source in these devices.

Original languageEnglish
Article number04DC01
JournalJapanese Journal of Applied Physics
Issue number4 PART 2
Publication statusPublished - 2011 Apr


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