TY - JOUR
T1 - Analysis of the relaxation process of electron–hole pairs in α-Al2O3 using transient absorption spectroscopy
AU - Koshimizu, Masanori
AU - Muroya, Yusa
AU - Yamashita, Shinichi
AU - Yamamoto, Hiroki
AU - Fujimoto, Yutaka
AU - Asai, Keisuke
N1 - Funding Information:
This work was supported by Network Joint Research Center for Materials and Devices and joint research project of Department of Nuclear Engineering, The University of Tokyo. The authors thank Mr. Ueda and Prof. Uesaka for their technical support.
Publisher Copyright:
© 2017, Springer Science+Business Media New York.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - We measured transient absorption in α-Al2O3 after pulsed electron beam irradiation to analyze the relaxation process of excited states. We used two measurement systems to obtain transient absorption in nanosecond and picosecond time scales. In the nanosecond time scale, we observed a band at 610 nm in addition to a shoulder at 420 nm. This observation is consistent with that in a previous paper, and these bands are attributed to Al interstitials according to the paper. The decay behavior of these bands was significantly different in the picosecond time scale. The difference in the decay kinetics strongly suggests that the band at 610 nm and the shoulder at 420 nm are attributed to two kinds of Al interstitials.
AB - We measured transient absorption in α-Al2O3 after pulsed electron beam irradiation to analyze the relaxation process of excited states. We used two measurement systems to obtain transient absorption in nanosecond and picosecond time scales. In the nanosecond time scale, we observed a band at 610 nm in addition to a shoulder at 420 nm. This observation is consistent with that in a previous paper, and these bands are attributed to Al interstitials according to the paper. The decay behavior of these bands was significantly different in the picosecond time scale. The difference in the decay kinetics strongly suggests that the band at 610 nm and the shoulder at 420 nm are attributed to two kinds of Al interstitials.
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U2 - 10.1007/s10854-017-6423-7
DO - 10.1007/s10854-017-6423-7
M3 - Article
AN - SCOPUS:85011664777
SN - 0957-4522
VL - 28
SP - 7091
EP - 7094
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -