Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs

Kazuhiko Endo; Shinji Migita; Yuki Ishikawa; Takashi Matsukawa; Shin Ichi O'uchi; Junji Tsukada; Wataru Mizubayashi; Yukinori Morita; Hiroyuki Ota; Hitomi Yamauchi; Meishoku Masahara

doi:10.3390/jlpea4020110

Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs

Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin Ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

Abstract

A threshold voltage (V_th) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the V_th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V_th controllability in terms of the size dependence such as the gate length (L_G) and the fin width (T_Fin).

Original language	English
Pages (from-to)	110-118
Number of pages	9
Journal	Journal of Low Power Electronics and Applications
Volume	4
Issue number	2
DOIs	https://doi.org/10.3390/jlpea4020110
Publication status	Published - 2014 May 23
Externally published	Yes

Keywords

FinFET
SOI
Threshold

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.3390/jlpea4020110

Cite this

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abstract = "A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).",

keywords = "FinFET, SOI, Threshold",

author = "Kazuhiko Endo and Shinji Migita and Yuki Ishikawa and Takashi Matsukawa and O'uchi, {Shin Ichi} and Junji Tsukada and Wataru Mizubayashi and Yukinori Morita and Hiroyuki Ota and Hitomi Yamauchi and Meishoku Masahara",

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month = may,

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doi = "10.3390/jlpea4020110",

language = "English",

volume = "4",

pages = "110--118",

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T1 - Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs

AU - Endo, Kazuhiko

AU - Migita, Shinji

AU - Ishikawa, Yuki

AU - Matsukawa, Takashi

AU - O'uchi, Shin Ichi

AU - Tsukada, Junji

AU - Mizubayashi, Wataru

AU - Morita, Yukinori

AU - Ota, Hiroyuki

AU - Yamauchi, Hitomi

AU - Masahara, Meishoku

PY - 2014/5/23

Y1 - 2014/5/23

N2 - A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

AB - A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

KW - FinFET

KW - SOI

KW - Threshold

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DO - 10.3390/jlpea4020110

M3 - Article

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VL - 4

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EP - 118

JO - Journal of Low Power Electronics and Applications

JF - Journal of Low Power Electronics and Applications

IS - 2

ER -

Analysis of threshold voltage flexibility in ultrathin-BOX SOI FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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