Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

K. Endo; Y. Ishikawa; Y. Liu; T. Matsukawa; S. O'Uchi; J. Tsukada; S. Migita; W. Mizubayashi; Y. Morita; H. Ota; H. Yamauchi; M. Masahara

doi:10.1109/S3S.2013.6716563

Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

K. Endo, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, S. Migita, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We have successfully demonstrated a V_th controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the V_th of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the V_th controllability in terms of the size dependence such as the gate length (L_G) and the fin width (T_Fin).

Original language	English
Title of host publication	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Publisher	IEEE Computer Society
ISBN (Print)	9781479913602
DOIs	https://doi.org/10.1109/S3S.2013.6716563
Publication status	Published - 2013
Event	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States Duration: 2013 Oct 7 → 2013 Oct 10

Publication series

Name	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Conference

Conference	2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Country/Territory	United States
City	Monterey, CA
Period	13/10/7 → 13/10/10

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10.1109/S3S.2013.6716563

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Endo, K., Ishikawa, Y., Liu, Y., Matsukawa, T., O'Uchi, S., Tsukada, J., Migita, S., Mizubayashi, W., Morita, Y., Ota, H., Yamauchi, H., & Masahara, M. (2013). Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 Article 6716563 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716563

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title = "Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs",

abstract = "We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).",

author = "K. Endo and Y. Ishikawa and Y. Liu and T. Matsukawa and S. O'Uchi and J. Tsukada and S. Migita and W. Mizubayashi and Y. Morita and H. Ota and H. Yamauchi and M. Masahara",

year = "2013",

doi = "10.1109/S3S.2013.6716563",

language = "English",

isbn = "9781479913602",

series = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

publisher = "IEEE Computer Society",

booktitle = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013",

address = "United States",

note = "2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 ; Conference date: 07-10-2013 Through 10-10-2013",

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Endo, K, Ishikawa, Y, Liu, Y, Matsukawa, T, O'Uchi, S, Tsukada, J, Migita, S, Mizubayashi, W, Morita, Y, Ota, H, Yamauchi, H & Masahara, M 2013, Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs. in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013., 6716563, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, IEEE Computer Society, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Monterey, CA, United States, 13/10/7. https://doi.org/10.1109/S3S.2013.6716563

Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs. / Endo, K.; Ishikawa, Y.; Liu, Y. et al.
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society, 2013. 6716563 (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

AU - Endo, K.

AU - Ishikawa, Y.

AU - Liu, Y.

AU - Matsukawa, T.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Migita, S.

AU - Mizubayashi, W.

AU - Morita, Y.

AU - Ota, H.

AU - Yamauchi, H.

AU - Masahara, M.

PY - 2013

Y1 - 2013

N2 - We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

AB - We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).

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T3 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

BT - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

PB - IEEE Computer Society

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Endo K, Ishikawa Y, Liu Y, Matsukawa T, O'Uchi S, Tsukada J et al. Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs. In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013. IEEE Computer Society. 2013. 6716563. (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). doi: 10.1109/S3S.2013.6716563

Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs

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