Analytical models for symmetric thin-film double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors

Kunihiro Suzuki, Shigeo Satoh, Tetsu Tanaka, Satoshi Ando

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We derived analytical models for the current-voltage characteristics of double-gate silicon-on-insulator metal- oxide-semiconductor-field-effect-transistors. In the subthreshold region, we derived an analytical subthreshold slope model considering both depleted and induced charges. We proposed a unique definition of threshold voltage of the device, and showed that the threshold voltage is close to the experimentally defined threshold voltage at which the drain current has a specific value. The variation in the surface potential after the threshold voltage was modeled, and hence the models are valid in the moderate-inversion region as well as in the strong-inversion region. The models agree well with experimental data.

Original languageEnglish
Pages (from-to)4916-4922
Number of pages7
JournalJapanese Journal of Applied Physics
Issue number11 R
Publication statusPublished - 1993 Nov


  • Analytical model
  • CMOS
  • Double-gate
  • SOI


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