Analytical models for symmetric thin-film double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistors

We derived analytical models for the current-voltage characteristics of double-gate silicon-on-insulator metal- oxide-semiconductor-field-effect-transistors. In the subthreshold region, we derived an analytical subthreshold slope model considering both depleted and induced charges. We proposed a unique definition of threshold voltage of the device, and showed that the threshold voltage is close to the experimentally defined threshold voltage at which the drain current has a specific value. The variation in the surface potential after the threshold voltage was modeled, and hence the models are valid in the moderate-inversion region as well as in the strong-inversion region. The models agree well with experimental data.