TY - JOUR
T1 - Analytical surface potential expression for thin-film double-gate SOI MOSFETs
AU - Suzuki, Kunihiro
AU - Tanaka, Tetsu
AU - Tosaka, Yoshiharu
AU - Horie, Hiroshi
AU - Arimoto, Yoshihiro
AU - Itoh, Takashi
PY - 1994/2
Y1 - 1994/2
N2 - Using a perturbation theory, we derived an analytical surface potential expression for subthreshold and strong-inversion regions. This enabled us to derive analytical models for the subthreshold slope, threshold voltage, and induced electron concentration of a double-gate SOI MOSFET. We also clarified the dependence of the device characteristics on device parameters, and explained the ideal subthreshold factor. We do not expect volume inversion in practical devices. Our models' predictions agree well with numerical and experimental data.
AB - Using a perturbation theory, we derived an analytical surface potential expression for subthreshold and strong-inversion regions. This enabled us to derive analytical models for the subthreshold slope, threshold voltage, and induced electron concentration of a double-gate SOI MOSFET. We also clarified the dependence of the device characteristics on device parameters, and explained the ideal subthreshold factor. We do not expect volume inversion in practical devices. Our models' predictions agree well with numerical and experimental data.
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U2 - 10.1016/0038-1101(94)90085-X
DO - 10.1016/0038-1101(94)90085-X
M3 - Article
AN - SCOPUS:0028378433
SN - 0038-1101
VL - 37
SP - 327
EP - 332
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 2
ER -