Analytical surface potential expression for thin-film double-gate SOI MOSFETs

Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Itoh

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


Using a perturbation theory, we derived an analytical surface potential expression for subthreshold and strong-inversion regions. This enabled us to derive analytical models for the subthreshold slope, threshold voltage, and induced electron concentration of a double-gate SOI MOSFET. We also clarified the dependence of the device characteristics on device parameters, and explained the ideal subthreshold factor. We do not expect volume inversion in practical devices. Our models' predictions agree well with numerical and experimental data.

Original languageEnglish
Pages (from-to)327-332
Number of pages6
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 1994 Feb


Dive into the research topics of 'Analytical surface potential expression for thin-film double-gate SOI MOSFETs'. Together they form a unique fingerprint.

Cite this