TY - JOUR
T1 - Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(1 0 0) substrate near the interface
AU - Suwa, Tomoyuki
AU - Teramoto, Akinobu
AU - Nagata, Kohki
AU - Ogura, Atsushi
AU - Nohira, Hiroshi
AU - Muro, Takayuki
AU - Kinoshita, Toyohiko
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
AU - Hattori, Takeo
N1 - Funding Information:
This work was supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) under a Grant-in-Aid for Specially Promoted Research (no. 18002004 ) and a Grant-in-Aid for Scientific Research B (no. 19360014 ). The synchrotron radiation experiments were performed at BL27, SPring-8 with the approval of JASRI as part of the projects of Nanotechnology Support commissioned by the MEXT.
PY - 2013
Y1 - 2013
N2 - The angle-resolved Si 2p photoelectron spectra arising from transition layer formed between bulk SiO2 and bulk Si(1 0 0)-substrate were measured with probing depth of nearly 2 nm. The influence of oxidation temperature in the range from 900 C to 1050 C, annealing in forming gas at 400 C, and oxidation using oxygen radicals at 400 C on the chemical structures of interfacial transition layer were clarified. It was found for the thermally grown interfacial transition layer that two compositional transition layers (CTLs) are formed on the oxide side of the CTL/Si interface and the oxidation-induced chemical structures are formed on the Si substrate side of the interface. Furthermore, a part of the oxidation-induced chemical structures in the Si substrate near the interface was found to be closely correlated with the oxidation-induced residual stress near the interface.
AB - The angle-resolved Si 2p photoelectron spectra arising from transition layer formed between bulk SiO2 and bulk Si(1 0 0)-substrate were measured with probing depth of nearly 2 nm. The influence of oxidation temperature in the range from 900 C to 1050 C, annealing in forming gas at 400 C, and oxidation using oxygen radicals at 400 C on the chemical structures of interfacial transition layer were clarified. It was found for the thermally grown interfacial transition layer that two compositional transition layers (CTLs) are formed on the oxide side of the CTL/Si interface and the oxidation-induced chemical structures are formed on the Si substrate side of the interface. Furthermore, a part of the oxidation-induced chemical structures in the Si substrate near the interface was found to be closely correlated with the oxidation-induced residual stress near the interface.
KW - Compositional transition layer
KW - Photoelectron spectroscopy
KW - SiO/Si(1 0 0) interface
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U2 - 10.1016/j.mee.2013.03.004
DO - 10.1016/j.mee.2013.03.004
M3 - Article
AN - SCOPUS:84876748934
SN - 0167-9317
VL - 109
SP - 197
EP - 199
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -