TY - JOUR
T1 - Angle-resolved photoelectron study on the structures of silicon nitride films and Si3 N4 /Si interfaces formed using nitrogen-hydrogen radicals
AU - Aratani, Takashi
AU - Higuchi, Masaaki
AU - Sugawa, Shigetoshi
AU - Ikenaga, Eiji
AU - Ushio, Jiro
AU - Nohira, Hiroshi
AU - Suwa, Tomoyuki
AU - Teramoto, Akinobu
AU - Ohmi, Tadahiro
AU - Hattori, Takeo
N1 - Funding Information:
The authors gratefully acknowledge the Ministry of Economy, Trade, and Industry and The New Energy and Industrial Technology Development Organization for their financial support to the development of plasma-process equipment. This work was supported by the Japanese Ministry of Education, Culture, Sports, Science and Technology under a Grant-in-Aid for Specially Promoted Research (Project No. 18002004), a Grant-in-Aid for Scientific Research (B) (Project No. 19360014), and a Grant-in-Aid for Young Scientists (Start-up) (Project No. 18860006). The synchrotron radiation experiments were performed at SPring-8 with the approval of Japan Synchrotron Radiation Research Institute for the project of Nanotechnology Support of the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2008
Y1 - 2008
N2 - Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si3 N4 film is covered with one monolayer of Si- (OH) 3 N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si3 N4 /Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si-H bonds at the Si3 N4 /Si (110) interface is 38%-53% larger than those at the Si3 N4 /Si (100) and Si3 N4 /Si (111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.
AB - Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation, which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: (1) the Si3 N4 film is covered with one monolayer of Si- (OH) 3 N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), (2) the Si3 N4 /Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, and (3) the observation that the number of Si-H bonds at the Si3 N4 /Si (110) interface is 38%-53% larger than those at the Si3 N4 /Si (100) and Si3 N4 /Si (111) interfaces indicates a dependence of the interface structure on the orientation of the substrate.
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U2 - 10.1063/1.3002418
DO - 10.1063/1.3002418
M3 - Article
AN - SCOPUS:58149259989
SN - 0021-8979
VL - 104
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 11
M1 - 114112
ER -