Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates

Hiroyuki Sasaki; Akinori Tanaka; Yosuke Kuriyama; Tazumi Nagasawa; Yuitsu Takeda; Shoji Suzuki; Shigeru Sato; Toshiro Nagase

doi:10.1016/j.ssc.2003.09.023

Angle-resolved photoemission study of CoSi₂ nanofilms grown on Si(111) substrates

Hiroyuki Sasaki, Akinori Tanaka, Yosuke Kuriyama, Tazumi Nagasawa, Yuitsu Takeda, Shoji Suzuki, Shigeru Sato, Toshiro Nagase

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Abstract

We have carried out an angle-resolved photoemission study for CoSi ₂ nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi₂(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi₂ nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi₂ surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi₂(111) nanofilms grown on Si(111) substrates.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Solid State Communications
Volume	129
Issue number	2
DOIs	https://doi.org/10.1016/j.ssc.2003.09.023
Publication status	Published - 2004 Jan

Keywords

A. Metal-semiconductor thin film structures
A. Silicides
B. Molecular beam epitaxy
E. Angle-resolved photoemission spectroscopies

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2003.09.023

Cite this

@article{a04fd92df253481fa91074ef3b835a54,

title = "Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates",

abstract = "We have carried out an angle-resolved photoemission study for CoSi 2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.",

keywords = "A. Metal-semiconductor thin film structures, A. Silicides, B. Molecular beam epitaxy, E. Angle-resolved photoemission spectroscopies",

author = "Hiroyuki Sasaki and Akinori Tanaka and Yosuke Kuriyama and Tazumi Nagasawa and Yuitsu Takeda and Shoji Suzuki and Shigeru Sato and Toshiro Nagase",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and also supported by a grant from the Advanced Technology Institute Foundation. H.S. thanks the Japan Society for Promotion of Science (JSPS) for financial support.",

year = "2004",

month = jan,

doi = "10.1016/j.ssc.2003.09.023",

language = "English",

volume = "129",

pages = "91--95",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Angle-resolved photoemission study of CoSi2 nanofilms grown on Si(111) substrates

AU - Sasaki, Hiroyuki

AU - Tanaka, Akinori

AU - Kuriyama, Yosuke

AU - Nagasawa, Tazumi

AU - Takeda, Yuitsu

AU - Suzuki, Shoji

AU - Sato, Shigeru

AU - Nagase, Toshiro

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and also supported by a grant from the Advanced Technology Institute Foundation. H.S. thanks the Japan Society for Promotion of Science (JSPS) for financial support.

PY - 2004/1

Y1 - 2004/1

N2 - We have carried out an angle-resolved photoemission study for CoSi 2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.

AB - We have carried out an angle-resolved photoemission study for CoSi 2 nanofilms grown on the Si(111)-7×7 substrates. The surface of CoSi2(111) nanofilm changes from the bulk-truncated surface to the surface with additional Si-bilayer by annealing at higher temperature above 825 K. The angle-resolved photoemission spectra of the CoSi2 nanofilm annealed at 853 K show the spectral features originated from the surface resonance state on the CoSi2 surface terminated by Si-bilayer. From the detailed photoemission study, we discuss the surface electronic structure in CoSi2(111) nanofilms grown on Si(111) substrates.

KW - A. Metal-semiconductor thin film structures

KW - A. Silicides

KW - B. Molecular beam epitaxy

KW - E. Angle-resolved photoemission spectroscopies

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U2 - 10.1016/j.ssc.2003.09.023

DO - 10.1016/j.ssc.2003.09.023

M3 - Article

AN - SCOPUS:0242573715

SN - 0038-1098

VL - 129

SP - 91

EP - 95

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -