Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides

K. Kawase, J. Tanimura, H. Kurokawa, K. Kobayashi, A. Teramoto, T. Ogata, M. Inoue

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15 Citations (Scopus)


We studied nitrogen distribution, concentration and chemical state in NO- and N2O-exposed silicon oxide films, to understand the relationship between nitridation and suppression of stress-induced leakage current (SILC) resulting from Fowler-Nordheim (F-N) stress. We applied angle resolved X-ray photoelectron spectroscopy (ARXPS) and electron energy loss spectroscopy (EELS) to obtain information at less than 2-nm thick film-substrate interface layers. Si3N4-like layer is formed only at the film-substrate interface in NO oxynitride. Nitrogen atoms in N2O oxynitride are broadly distributed in the oxynitride film near the interface because the interface moves deeper from the surface during N2O nitridation due to both oxidation and nitridation proceed simultaneously. SILC of both NO and N2O oxynitride decrease exceedingly. It is clear that both NO and N2O nitridation is effective in suppressing SILC in spite of the quite difference in the distribution, concentration and chemical state of nitrogen atoms.

Original languageEnglish
Pages (from-to)225-231
Number of pages7
JournalMaterials Science in Semiconductor Processing
Issue number3
Publication statusPublished - 1999 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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