Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

Yutaka Oyama; Toshio Kochiya; Ken Suto; Jun Ichi Nishizawa

doi:10.1016/S0022-0248(03)01493-3

Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

Yutaka Oyama, Toshio Kochiya, Ken Suto, Jun Ichi Nishizawa

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

Abstract

The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at T_g = 450-490°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the 〈 1 1 2 〉 direction steps on (1 1 1)B at T_g = 450°C. This indicated that the kink density was high in the 〈 1 1 2 〉 direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (1 1 1)B. And isotropic lateral growth rate was observed on the (1 1 1) A surface at T_g = 450°C. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed.

Original language	English
Pages (from-to)	41-48
Number of pages	8
Journal	Journal of Crystal Growth
Volume	258
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(03)01493-3
Publication status	Published - 2003 Oct 1

Keywords

A1. Crystal morphology
A1. Growth models
A1. Surface structure
A3. Liquid phase epitaxy
B1. Phosphide
B2. Semiconducting indium phosphide

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(03)01493-3

Cite this

@article{3bd7db8a33d045a0b623a8f18b3d4c28,

title = "Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy",

abstract = "The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at Tg = 450-490°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the 〈 1 1 2 〉 direction steps on (1 1 1)B at Tg = 450°C. This indicated that the kink density was high in the 〈 1 1 2 〉 direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (1 1 1)B. And isotropic lateral growth rate was observed on the (1 1 1) A surface at Tg = 450°C. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed.",

keywords = "A1. Crystal morphology, A1. Growth models, A1. Surface structure, A3. Liquid phase epitaxy, B1. Phosphide, B2. Semiconducting indium phosphide",

author = "Yutaka Oyama and Toshio Kochiya and Ken Suto and Nishizawa, {Jun Ichi}",

year = "2003",

month = oct,

day = "1",

doi = "10.1016/S0022-0248(03)01493-3",

language = "English",

volume = "258",

pages = "41--48",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

AU - Oyama, Yutaka

AU - Kochiya, Toshio

AU - Suto, Ken

AU - Nishizawa, Jun Ichi

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at Tg = 450-490°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the 〈 1 1 2 〉 direction steps on (1 1 1)B at Tg = 450°C. This indicated that the kink density was high in the 〈 1 1 2 〉 direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (1 1 1)B. And isotropic lateral growth rate was observed on the (1 1 1) A surface at Tg = 450°C. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed.

AB - The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at Tg = 450-490°C. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the 〈 1 1 2 〉 direction steps on (1 1 1)B at Tg = 450°C. This indicated that the kink density was high in the 〈 1 1 2 〉 direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (1 1 1)B. And isotropic lateral growth rate was observed on the (1 1 1) A surface at Tg = 450°C. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed.

KW - A1. Crystal morphology

KW - A1. Growth models

KW - A1. Surface structure

KW - A3. Liquid phase epitaxy

KW - B1. Phosphide

KW - B2. Semiconducting indium phosphide

UR - http://www.scopus.com/inward/record.url?scp=0041830120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041830120&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(03)01493-3

DO - 10.1016/S0022-0248(03)01493-3

M3 - Article

AN - SCOPUS:0041830120

SN - 0022-0248

VL - 258

SP - 41

EP - 48

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Angular dependence of lateral growth rate on the InP (1 1 1)A,B surface by liquid-phase epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this