Anion arrangement effects on electronic states of κ-type BEDT-TTF compounds

Yuto Nakamura, Naoki Yoneyama, Takahiko Sasaki, Takaaki Hiramatsu, Yukihiro Yoshida, Gunzi Saito, Hideo Kishida

Research output: Contribution to journalArticlepeer-review


We investigate the anion arrangement effect on the electronic states of various bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) compounds composed of BEDT-TTF layers and counter-anion networks via Raman scattering measurements. The anion vibrational modes and charge-sensitive BEDT-TTF vibrational modes of disordered-anion compounds κ-(BEDT-TTF)2Cu2(CN)3, κ-(BEDT-TTF)2Ag2(CN)3, and (BEDT-TTF)Ag4(CN)5, indicate splitting, contrary to the case of non-disordered-anion compounds κ-(BEDT-TTF)2Ag(CN)[N(CN)2] and κ-(BEDT-TTF)2Cu- [N(CN)2]Cl. The splitting behaviors indicate that several possible arrangements of CN bonds exist in the anion networks. These results suggest that the disorder in the anion structures is not directly due to the recently reported charge disproportionation or relaxor-like dielectric response in some κ-type BEDT-TTF compounds. Additionally, in κ-(BEDTTTF) 2Cu2(CN)3, the frequency of the anion mode and the dielectric constant have local maxima at the same temperature. This result suggests that the anion modes are affected by the dielectric responses of the counter cations.

Original languageEnglish
Article number054703
JournalJournal of the Physical Society of Japan
Issue number5
Publication statusPublished - 2021 May 15


Dive into the research topics of 'Anion arrangement effects on electronic states of κ-type BEDT-TTF compounds'. Together they form a unique fingerprint.

Cite this