TY - GEN
T1 - Anion-exchange separation of zirconium from hafnium using a multi-column method
AU - Uchikoshi, Masahito
AU - Mimura, Kouji
AU - Isshiki, Minoru
PY - 2012
Y1 - 2012
N2 - HfO 2 is expected to be a gate dielectric used in ULSI alternatives to SiO 2. Although the materials used in ULSI are required to be significantly pure, commercial Hf contains > 2 mass% Zr. It is important to establish a process for removing Zr from Hf. In the present study, anion-exchange separation using a multi-column method was employed. The separation tests were carried out at variety of temperatures and flow rates. The decrease in the flow rate of the mobile phase made the elution curves of both Hf(IV) and Zr(IV) broaden contrary to the case of Co(II), Cu(II), or Fe(III). This is caused by the difference in adsorption rate on the anion-exchange resin. In addition, more than one column was connected in series in order to enhance the separation. As a result, the content of Zr(IV) was successfully reduced to 1/100 of that relative to the raw material.
AB - HfO 2 is expected to be a gate dielectric used in ULSI alternatives to SiO 2. Although the materials used in ULSI are required to be significantly pure, commercial Hf contains > 2 mass% Zr. It is important to establish a process for removing Zr from Hf. In the present study, anion-exchange separation using a multi-column method was employed. The separation tests were carried out at variety of temperatures and flow rates. The decrease in the flow rate of the mobile phase made the elution curves of both Hf(IV) and Zr(IV) broaden contrary to the case of Co(II), Cu(II), or Fe(III). This is caused by the difference in adsorption rate on the anion-exchange resin. In addition, more than one column was connected in series in order to enhance the separation. As a result, the content of Zr(IV) was successfully reduced to 1/100 of that relative to the raw material.
KW - Anion-exchange separation
KW - Distribution coefficient
KW - High purity Hf
KW - Multi-column
KW - Separation factor
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M3 - Conference contribution
AN - SCOPUS:84860778308
SN - 9781118291238
T3 - TMS Annual Meeting
SP - 303
EP - 314
BT - T.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization - Held During the TMS 2012 Annual Meeting and Exhibition
T2 - T.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization - TMS 2012 Annual Meeting and Exhibition
Y2 - 11 March 2012 through 15 March 2012
ER -