Anisotropic Si etching condition for preparing optically smooth surfaces

Minoru Sasaki, Takehiro Fujii, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A combination of dry and wet anisotropic Si etching has been found to be useful for preparing hexagonal holes having smooth sidewall surfaces. The dry etching defines the main shape, and the subsequent short-time wet etching smoothens the sidewall of the {110} surface. The etchant used is made up of ethylenediamine pyrocatechol and water. The surface roughness is quantitatively investigated for improving the sidewall smoothness. The angular alignment accuracy between the pattern and the crystallographic orientation is found to be important. The triangular etching pit obtained by the dummy etching is used for confirming the crystallographic orientation. The surface roughness of <20 nm Ra is repeatedly obtained. The solid polymer dye microcavity laser is fabricated as a replica of the Si structure obtained. The lasing spectra from microcavities show the higher Q value.

Original languageEnglish
Pages (from-to)83-92
Number of pages10
JournalSensors and Materials
Issue number2
Publication statusPublished - 2003 Jan 1


  • Anisotropic etching
  • Microcavity
  • Surface roughness
  • {110} surface

ASJC Scopus subject areas

  • Instrumentation
  • Materials Science(all)


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