Abstract
The angular dependences of the lateral growth rate are determined as the functions of growth temperature and growth time in liquid phase epitaxy of (0 0 1) InP at low growth temperature of 330-450 °C. From the deformation of artificially made tables after epitaxy, it is shown that the lateral growth rate has a strong anisotropy in [1 1 0] direction especially at low growth temperature (T g < 400 °C). This indicated that kink density was high in [1 1 0] direction on InP(0 0 1) surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high.
| Original language | English |
|---|---|
| Pages (from-to) | 78-82 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 216 |
| Issue number | 1-4 SPEC. |
| DOIs | |
| Publication status | Published - 2003 Jun 30 |
Keywords
- Anisotropy
- Crystal morphology
- InP
- LPE
- Surface and interface phenomena
- Surface migration
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films