Annealing effects for Ca3NbGa3Si2O 14 piezoelectric single crystals grown by micro-pulling-down method

Yuui Yokota; Masanori Kitahara; Shunsuke Kurosawa; Masato Sato; Kazushige Tota; Ko Onodera; Akira Yoshikawa

doi:10.1080/00150193.2013.843383

Annealing effects for Ca₃NbGa₃Si₂O ₁₄ piezoelectric single crystals grown by micro-pulling-down method

Yuui Yokota, Masanori Kitahara, Shunsuke Kurosawa, Masato Sato, Kazushige Tota, Ko Onodera, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The langasite-type Ca₃NbGa₃Si₂O ₁₄ [CNGS] piezoelectric crystals grown in Air and Ar were annealed under various temperatures and atmospheres and the effects of annealing on various properties were investigated. The absorption peaks around 360 and 500 nm of CNGS crystals grown in Air decreased by the annealing at 1300°C in Ar. On the other hand, the annealing at 1300°C in Air decreased transmittance in the range from 300 to 500 nm for the CNGS crystal grown in Ar. The results suggest that the absorptions around 350 and 500 nm originate from the excess oxygen and the post-annealing can control the oxygen content in the crystals.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Ferroelectrics
Volume	455
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2013.843383
Publication status	Published - 2013 Jan 1

Keywords

annealing effect
langasite
Piezoelectric crystal
single crystal

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title = "Annealing effects for Ca3NbGa3Si2O 14 piezoelectric single crystals grown by micro-pulling-down method",

abstract = "The langasite-type Ca3NbGa3Si2O 14 [CNGS] piezoelectric crystals grown in Air and Ar were annealed under various temperatures and atmospheres and the effects of annealing on various properties were investigated. The absorption peaks around 360 and 500 nm of CNGS crystals grown in Air decreased by the annealing at 1300°C in Ar. On the other hand, the annealing at 1300°C in Air decreased transmittance in the range from 300 to 500 nm for the CNGS crystal grown in Ar. The results suggest that the absorptions around 350 and 500 nm originate from the excess oxygen and the post-annealing can control the oxygen content in the crystals.",

keywords = "annealing effect, langasite, Piezoelectric crystal, single crystal",

author = "Yuui Yokota and Masanori Kitahara and Shunsuke Kurosawa and Masato Sato and Kazushige Tota and Ko Onodera and Akira Yoshikawa",

note = "Funding Information: This work was partially supported by Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (B), 23750234.",

year = "2013",

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doi = "10.1080/00150193.2013.843383",

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TY - JOUR

T1 - Annealing effects for Ca3NbGa3Si2O 14 piezoelectric single crystals grown by micro-pulling-down method

AU - Yokota, Yuui

AU - Kitahara, Masanori

AU - Kurosawa, Shunsuke

AU - Sato, Masato

AU - Tota, Kazushige

AU - Onodera, Ko

AU - Yoshikawa, Akira

N1 - Funding Information: This work was partially supported by Ministry of Education, Culture, Sports, Science and Technology of Japanese government, Grant-in-Aid for Young Scientists (B), 23750234.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The langasite-type Ca3NbGa3Si2O 14 [CNGS] piezoelectric crystals grown in Air and Ar were annealed under various temperatures and atmospheres and the effects of annealing on various properties were investigated. The absorption peaks around 360 and 500 nm of CNGS crystals grown in Air decreased by the annealing at 1300°C in Ar. On the other hand, the annealing at 1300°C in Air decreased transmittance in the range from 300 to 500 nm for the CNGS crystal grown in Ar. The results suggest that the absorptions around 350 and 500 nm originate from the excess oxygen and the post-annealing can control the oxygen content in the crystals.

AB - The langasite-type Ca3NbGa3Si2O 14 [CNGS] piezoelectric crystals grown in Air and Ar were annealed under various temperatures and atmospheres and the effects of annealing on various properties were investigated. The absorption peaks around 360 and 500 nm of CNGS crystals grown in Air decreased by the annealing at 1300°C in Ar. On the other hand, the annealing at 1300°C in Air decreased transmittance in the range from 300 to 500 nm for the CNGS crystal grown in Ar. The results suggest that the absorptions around 350 and 500 nm originate from the excess oxygen and the post-annealing can control the oxygen content in the crystals.

KW - annealing effect

KW - langasite

KW - Piezoelectric crystal

KW - single crystal

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JO - Ferroelectrics

JF - Ferroelectrics

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ER -

Annealing effects for Ca₃NbGa₃Si₂O ₁₄ piezoelectric single crystals grown by micro-pulling-down method

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Keywords

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