Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

S. Toyoda; H. Kamada; T. Tanimura; H. Kumigashira; M. Oshima; T. Ohtsuka; Y. Hata; M. Niwa

doi:10.1063/1.3298355

Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO₂/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, M. Niwa

IMRAM - Division of Inorganic Material Research

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17 Citations (Scopus)

Abstract

We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO₂ layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO₂ interface, which is well related to the Vth shift based on the interface dipole model.

Original language	English
Article number	042905
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3298355
Publication status	Published - 2010

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10.1063/1.3298355

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title = "Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside",

abstract = "We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.",

author = "S. Toyoda and H. Kamada and T. Tanimura and H. Kumigashira and M. Oshima and T. Ohtsuka and Y. Hata and M. Niwa",

note = "Funding Information: This work was supported by Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 05S2-002 and 08S2-003 at the Institute of Materials Structure Science in KEK. In-depth analysis project is supported by JST-CREST.",

year = "2010",

doi = "10.1063/1.3298355",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

AU - Toyoda, S.

AU - Kamada, H.

AU - Tanimura, T.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Ohtsuka, T.

AU - Hata, Y.

AU - Niwa, M.

N1 - Funding Information: This work was supported by Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 05S2-002 and 08S2-003 at the Institute of Materials Structure Science in KEK. In-depth analysis project is supported by JST-CREST.

PY - 2010

Y1 - 2010

N2 - We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.

AB - We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.

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Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO₂/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

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