Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

Masashi Suezawa; Ken Ichi Kojima; Atsuo Kasuya; Ichiro Yonenaga; Noritaka Usami

doi:10.1143/JJAP.45.9162

Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

Masashi Suezawa, Ken Ichi Kojima, Atsuo Kasuya, Ichiro Yonenaga, Noritaka Usami

Research output: Contribution to journal › Article › peer-review

Abstract

We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.

Original language	English
Pages (from-to)	9162-9166
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.45.9162
Publication status	Published - 2006 Dec 15
Externally published	Yes

Keywords

Acceptor
Complex
Electron irradiation
Hydrogen
Interstitial
Pair
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.45.9162

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title = "Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation",

abstract = "We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.",

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T1 - Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

AU - Suezawa, Masashi

AU - Kojima, Ken Ichi

AU - Kasuya, Atsuo

AU - Yonenaga, Ichiro

AU - Usami, Noritaka

PY - 2006/12/15

Y1 - 2006/12/15

N2 - We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.

AB - We observed the annihilation of boron-hydrogen (BH) pairs and gallium-hydrogen (GaH) pairs during electron irradiation of Si crystals. BH and GaH pairs were generated by annealing of specimens co-doped with B or Ga and H. They were then irradiated with 3 MV electrons at room temperature. Intensities of optical absorption peaks due to BH and GaH pairs were observed at about 7 K. BH pairs and GaH pairs were found to decrease in one stage and two stages, respectively, with the increase of irradiation dose. These decreases were interpreted to be due to interactions between those pairs and self-interstitials.

KW - Acceptor

KW - Complex

KW - Electron irradiation

KW - Hydrogen

KW - Interstitial

KW - Pair

KW - Silicon

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Annihilation of acceptor-hydrogen pairs in Si crystals due to electron irradiation

Abstract

Keywords

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