It is shown that thick native oxide layers (up to 2500 Å) can be grown on a-Si: H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1-46. The voltage growth rate is found to be 5.3 Å/V.
- Anodic oxidation
- Hydrogenated amorphous silicon
- Semiconductor devices and materials