The first a-Si:H MOSFET having native oxide at the insulator/a-Si: H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3 native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si: H device technology as a low-temperature oxidation process.
- Anodic oxidation
- Hydrogenated amorphous silicon
- Semiconducting devices and materials