Anomalous anisotropic magnetoresistance in pseudo-single-crystal γ'-Fe4N films

Masakiyo Tsunoda, Hirokazu Takahashi, Satoshi Kokado, Yosuke Komasaki, Akimasa Sakuma, Migaku Takahashi

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous cos(4θ) component appears on the AMR curves below 30 K. A first-principles calculation of γ'-Fe 4N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.

Original languageEnglish
Article number113003
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2010 Nov


Dive into the research topics of 'Anomalous anisotropic magnetoresistance in pseudo-single-crystal γ'-Fe4N films'. Together they form a unique fingerprint.

Cite this