Anomalous anisotropic magnetoresistance in pseudo-single-crystal γ'-Fe4N films

Masakiyo Tsunoda; Hirokazu Takahashi; Satoshi Kokado; Yosuke Komasaki; Akimasa Sakuma; Migaku Takahashi

doi:10.1143/APEX.3.113003

Anomalous anisotropic magnetoresistance in pseudo-single-crystal γ'-Fe₄N films

Masakiyo Tsunoda, Hirokazu Takahashi, Satoshi Kokado, Yosuke Komasaki, Akimasa Sakuma, Migaku Takahashi

Research Center for Green X-Tech

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe₄N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous cos(4θ) component appears on the AMR curves below 30 K. A first-principles calculation of γ'-Fe ₄N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.

Original language	English
Article number	113003
Journal	Applied Physics Express
Volume	3
Issue number	11
DOIs	https://doi.org/10.1143/APEX.3.113003
Publication status	Published - 2010 Nov

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abstract = "The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous cos(4θ) component appears on the AMR curves below 30 K. A first-principles calculation of γ'-Fe 4N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.",

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AU - Tsunoda, Masakiyo

AU - Takahashi, Hirokazu

AU - Kokado, Satoshi

AU - Komasaki, Yosuke

AU - Sakuma, Akimasa

AU - Takahashi, Migaku

PY - 2010/11

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N2 - The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous cos(4θ) component appears on the AMR curves below 30 K. A first-principles calculation of γ'-Fe 4N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.

AB - The negative anisotropic magnetoresistance (AMR) effect is observed in pseudo-single-crystal γ'-Fe4N films from 4 to 300 K. Below 50 K, the changes in the AMR ratio depend on the crystal direction along which the sensing current flows. A large stepwise change of the AMR ratio is observed along the [100] direction. The anomalous cos(4θ) component appears on the AMR curves below 30 K. A first-principles calculation of γ'-Fe 4N indicates that the electron occupation of the 3d orbitals is modified as the magnetic moment direction changes with respect to the crystal axes. The anomalous behavior of the AMR effect might be due to the change of the partial density of states of 3d-orbitals at the Fermi level.

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Anomalous anisotropic magnetoresistance in pseudo-single-crystal γ'-Fe₄N films

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