Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Shunpei Takeshita; Sadashige Matsuo; Takahiro Tanaka; Shu Nakaharai; Kazuhito Tsukagoshi; Takahiro Moriyama; Teruo Ono; Tomonori Arakawa; Kensuke Kobayashi

doi:10.1063/1.4943642

Anomalous behavior of 1/f noise in graphene near the charge neutrality point

Shunpei Takeshita, Sadashige Matsuo, Takahiro Tanaka, Shu Nakaharai, Kazuhito Tsukagoshi, Takahiro Moriyama, Teruo Ono, Tomonori Arakawa, Kensuke Kobayashi

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (V_SD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low V_SD region. We propose that the depinning of the electron-hole puddles is induced at finite V_SD, which may explain this anomalous noise behavior.

Original language	English
Article number	103106
Journal	Applied Physics Letters
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.4943642
Publication status	Published - 2016 Mar 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4943642

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abstract = "We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.",

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AU - Takeshita, Shunpei

AU - Matsuo, Sadashige

AU - Tanaka, Takahiro

AU - Nakaharai, Shu

AU - Tsukagoshi, Kazuhito

AU - Moriyama, Takahiro

AU - Ono, Teruo

AU - Arakawa, Tomonori

AU - Kobayashi, Kensuke

N1 - Funding Information: This work was partially supported by JSPS KAKENHI (26220711, 15K17680, 25103003, 15H05854, 25107004). K.K. acknowledges the stimulating discussions in the meeting of the Cooperative Research Project of RIEC, Tohoku University. Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/3/7

Y1 - 2016/3/7

N2 - We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

AB - We investigate the noise in single layer graphene devices from equilibrium to far-from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge's relation is not the case around the charge neutrality point, we found that it is recovered at very low VSD region. We propose that the depinning of the electron-hole puddles is induced at finite VSD, which may explain this anomalous noise behavior.

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Anomalous behavior of 1/f noise in graphene near the charge neutrality point

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