Anomalous Hall effect in anatase Ti1-xCoxO 2-δ at low temperature regime

K. Ueno; T. Fukumura; H. Toyosaki; M. Nakano; M. Kawasaki

doi:10.1063/1.2535777

Anomalous Hall effect in anatase Ti_1-xCo_xO _2-δ at low temperature regime

K. Ueno, T. Fukumura, H. Toyosaki, M. Nakano, M. Kawasaki

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1-x Cox O2-δ thin film is studied from 10 to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-x Cox O2-δ also follows a scaling relationship to conductivity xx as AHE xx 1.6, which was observed for another polymorph rutile Ti1-x Cox O2-δ, suggesting an identical mechanism of their AHE.

Original language	English
Article number	072103
Journal	Applied Physics Letters
Volume	90
Issue number	7
DOIs	https://doi.org/10.1063/1.2535777
Publication status	Published - 2007

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title = "Anomalous Hall effect in anatase Ti1-xCoxO 2-δ at low temperature regime",

abstract = "Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1-x Cox O2-δ thin film is studied from 10 to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-x Cox O2-δ also follows a scaling relationship to conductivity xx as AHE xx 1.6, which was observed for another polymorph rutile Ti1-x Cox O2-δ, suggesting an identical mechanism of their AHE.",

author = "K. Ueno and T. Fukumura and H. Toyosaki and M. Nakano and M. Kawasaki",

note = "Funding Information: The authors would like to thank D. Chiba, F. Matsukura, N. Nagaosa, H. Ohno, and S. Onoda for valuable discussions and R. Jansen for discussions with unpublished data. This work was supported by the MEXT Grant of Creative Scientific Research No. 14GS0204, by the MEXT Grant of the Scientific Research on Priority Areas (16076205), and by the NEDO, Industrial Research Grant Program (05A24020d).",

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doi = "10.1063/1.2535777",

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volume = "90",

journal = "Applied Physics Letters",

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T1 - Anomalous Hall effect in anatase Ti1-xCoxO 2-δ at low temperature regime

AU - Ueno, K.

AU - Fukumura, T.

AU - Toyosaki, H.

AU - Nakano, M.

AU - Kawasaki, M.

N1 - Funding Information: The authors would like to thank D. Chiba, F. Matsukura, N. Nagaosa, H. Ohno, and S. Onoda for valuable discussions and R. Jansen for discussions with unpublished data. This work was supported by the MEXT Grant of Creative Scientific Research No. 14GS0204, by the MEXT Grant of the Scientific Research on Priority Areas (16076205), and by the NEDO, Industrial Research Grant Program (05A24020d).

PY - 2007

Y1 - 2007

N2 - Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1-x Cox O2-δ thin film is studied from 10 to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-x Cox O2-δ also follows a scaling relationship to conductivity xx as AHE xx 1.6, which was observed for another polymorph rutile Ti1-x Cox O2-δ, suggesting an identical mechanism of their AHE.

AB - Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1-x Cox O2-δ thin film is studied from 10 to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-x Cox O2-δ also follows a scaling relationship to conductivity xx as AHE xx 1.6, which was observed for another polymorph rutile Ti1-x Cox O2-δ, suggesting an identical mechanism of their AHE.

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DO - 10.1063/1.2535777

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Anomalous Hall effect in anatase Ti_1-xCo_xO _2-δ at low temperature regime

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