Anomalous Hall effect in anatase Ti1-xCoxO 2-δ at low temperature regime

K. Ueno, T. Fukumura, H. Toyosaki, M. Nakano, M. Kawasaki

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Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase Ti1-x Cox O2-δ thin film is studied from 10 to 300 K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-x Cox O2-δ also follows a scaling relationship to conductivity xx as AHE xx 1.6, which was observed for another polymorph rutile Ti1-x Cox O2-δ, suggesting an identical mechanism of their AHE.

Original languageEnglish
Article number072103
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 2007


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