Anomalous hall effect in field-effect structures of (Ga,Mn)as

Daichi Chiba, A. Werpachowska, M. Endo, Y. Nishitani, F. Matsukura, T. Dietl, H. Ohno

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance σxy has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between σxy and σxx, similar to the one observed previously for thicker samples, is recovered.

Original languageEnglish
Article number106601
JournalPhysical Review Letters
Issue number10
Publication statusPublished - 2010 Mar 12


Dive into the research topics of 'Anomalous hall effect in field-effect structures of (Ga,Mn)as'. Together they form a unique fingerprint.

Cite this