TY - JOUR
T1 - Anomalous hall effect in field-effect structures of (Ga,Mn)as
AU - Chiba, Daichi
AU - Werpachowska, A.
AU - Endo, M.
AU - Nishitani, Y.
AU - Matsukura, F.
AU - Dietl, T.
AU - Ohno, H.
PY - 2010/3/12
Y1 - 2010/3/12
N2 - The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance σxy has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between σxy and σxx, similar to the one observed previously for thicker samples, is recovered.
AB - The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance σxy has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between σxy and σxx, similar to the one observed previously for thicker samples, is recovered.
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U2 - 10.1103/PhysRevLett.104.106601
DO - 10.1103/PhysRevLett.104.106601
M3 - Article
AN - SCOPUS:77949439477
SN - 0031-9007
VL - 104
JO - Physical Review Letters
JF - Physical Review Letters
IS - 10
M1 - 106601
ER -