Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

Y. Sakurai; S. Nomura; Y. Takada; J. Iwata; K. Shiraishi; M. Muraguchi; T. Endoh; Y. Shigeta; M. Ikeda; K. Makihara; S. Miyazaki

doi:10.1016/j.physe.2009.11.120

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental results are discussed in terms of the geometrical matching of the wave functions of a 2DEG and an electron in a Si-dot.

Original language	English
Pages (from-to)	918-921
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/j.physe.2009.11.120
Publication status	Published - 2010 Feb

Keywords

2DEG
Quantum dot
Si
Tunneling

Access to Document

10.1016/j.physe.2009.11.120

Cite this

Sakurai, Y., Nomura, S., Takada, Y., Iwata, J., Shiraishi, K., Muraguchi, M., Endoh, T., Shigeta, Y., Ikeda, M., Makihara, K., & Miyazaki, S. (2010). Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots. Physica E: Low-Dimensional Systems and Nanostructures, 42(4), 918-921. https://doi.org/10.1016/j.physe.2009.11.120

@article{fdf08ec887944d33b1f779e2f04c680f,

title = "Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots",

abstract = "We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental results are discussed in terms of the geometrical matching of the wave functions of a 2DEG and an electron in a Si-dot.",

keywords = "2DEG, Quantum dot, Si, Tunneling",

author = "Y. Sakurai and S. Nomura and Y. Takada and J. Iwata and K. Shiraishi and M. Muraguchi and T. Endoh and Y. Shigeta and M. Ikeda and K. Makihara and S. Miyazaki",

year = "2010",

month = feb,

doi = "10.1016/j.physe.2009.11.120",

language = "English",

volume = "42",

pages = "918--921",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "4",

}

Sakurai, Y, Nomura, S, Takada, Y, Iwata, J, Shiraishi, K, Muraguchi, M, Endoh, T, Shigeta, Y, Ikeda, M, Makihara, K & Miyazaki, S 2010, 'Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots', Physica E: Low-Dimensional Systems and Nanostructures, vol. 42, no. 4, pp. 918-921. https://doi.org/10.1016/j.physe.2009.11.120

TY - JOUR

T1 - Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

AU - Sakurai, Y.

AU - Nomura, S.

AU - Takada, Y.

AU - Iwata, J.

AU - Shiraishi, K.

AU - Muraguchi, M.

AU - Endoh, T.

AU - Shigeta, Y.

AU - Ikeda, M.

AU - Makihara, K.

AU - Miyazaki, S.

PY - 2010/2

Y1 - 2010/2

N2 - We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental results are discussed in terms of the geometrical matching of the wave functions of a 2DEG and an electron in a Si-dot.

AB - We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental results are discussed in terms of the geometrical matching of the wave functions of a 2DEG and an electron in a Si-dot.

KW - 2DEG

KW - Quantum dot

KW - Si

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=76949100920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76949100920&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2009.11.120

DO - 10.1016/j.physe.2009.11.120

M3 - Article

AN - SCOPUS:76949100920

SN - 1386-9477

VL - 42

SP - 918

EP - 921

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 4

ER -

Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this